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UTL1426L-S08-R 데이터시트(PDF) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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UTL1426L-S08-R 데이터시트(HTML) 3 Page - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD. |
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3 / 7 page ![]() www.doingter.cn — 3 — tf Fall Time --- 14 --- ns Qg Total Gate Charge VDS=-15V , VGS=-10V , ID=-10A --- 47.2 55 nC Qgs Gate-Source Charge --- 12 --- nC Qgd Gate-Drain “Miller” Charge --- 14 --- nC Rg 2 3 Ω Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage VGS=0V,IS=-1A, --- -0.72 -1 V IS Diode Forward Current --- --- -5.2 A Notes: Typical Characteristics: (T C=25℃ unless otherwise noted) UTL1426L-S08-R |
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