V10PWM45HM3SLASHI datasheet(1/5 Pages) VISHAY

부품명	V10PWM45HM3/I

상세설명	High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.38 V at IF = 5 A

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V10PWM45

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Vishay General Semiconductor

Revision: 05-Mar-2021

1

Document Number: 98176

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

High Current Density Surface-Mount

TMBS® (Trench MOS Barrier Schottky) Rectifier

Ultra Low VF = 0.38 V at IF = 5 A

LINKS TO ADDITIONAL RESOURCES

FEATURES

• Very low profile - typical height of 1.3 mm

• Trench MOS Schottky technology

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets

MSL

level

1,

per

J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling diodes, and polarity protection applications.

MECHANICAL DATA

Case: SlimDPAK (TO-252AE)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Base

P/NHM3

-

halogen-free,

RoHS-compliant,

and

AEC-Q101 qualified

Terminals:

matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 and HM3 suffix meets JESD 201 class 2 whisker test

Notes

(1) With infinite heatsink

(2) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RθJA

PRIMARY CHARACTERISTICS

IF(AV)

10 A

VRRM

45 V

IFSM

180 A

VF at IF = 10 A (TJ = 125 °C)

0.46 V

TJ max.

175 °C

Package

SlimDPAK (TO-252AE)

Circuit configuration

Single

SlimDPAK (TO-252AE)

eSMP® Series

1

2

K

PIN 1

K

HEATSINK

PIN 2

333

DDD3 D

3D Models

Available

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

V10PWM45

UNIT

Device marking code

V10PWM45

Maximum repetitive peak reverse voltage

VRRM

45

V

Maximum average forward rectified current (Fig. 1)

IF(AV) (1)

10

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

IFSM

180

A

Operating junction temperature range

TJ (2)

-40 to +175

°C

Storage temperature range

TSTG

-55 to +175

°C

유사한 부품 번호 - V10PWM45HM3/I

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	V10PWM10	140Kb / 5P	High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 5 A 04-Mar-2021
	V10PWM10-M3/I	140Kb / 5P	High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 5 A 04-Mar-2021
	V10PWM10HM3/I	140Kb / 5P	High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 5 A 04-Mar-2021
	V10PWM12	140Kb / 5P	High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5 A 04-Mar-2021
	V10PWM12-M3/I	140Kb / 5P	High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.51 V at IF = 5 A 04-Mar-2021

More results

유사한 설명 - V10PWM45HM3/I

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	V10P6-M3	95Kb / 5P	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.35 V at IF = 5 A 04-May-15
	V35PW12	122Kb / 5P	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A 01-Jun-17
	V35PW15	122Kb / 5P	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A 01-Jun-17
	V35PWM10	123Kb / 5P	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A 01-Jun-17
	V35PWM15	121Kb / 5P	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A 01-Jun-17
	V35PWM45	121Kb / 5P	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 5 A 01-Jun-17
	V35PWM60	121Kb / 5P	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.35 V at IF = 5 A 01-Jun-17
	V40PW12C	121Kb / 5P	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A 01-Jun-17
	V40PWM10C	121Kb / 5P	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A 01-Jun-17
	V40PWM12C	121Kb / 5P	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A 01-Jun-17

More results

V10PWM45HM3/I 데이터시트(PDF) 1 Page - Vishay Siliconix

V10PWM45HM3/I 데이터시트(HTML) 1 Page - Vishay Siliconix

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