WNSC16650CWQ datasheet(1/11 Pages) WEEN

부품명	WNSC16650CWQ

상세설명	Silicon Carbide Diode

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WNSC16650CW

Silicon Carbide Diode

Rev.01 - 07 September 2020

Product data sheet

1. General description

Dual Silicon Carbide Schottky diode in a

TO247-3L plastic package, designed for

high frequency switched-mode power

supplies.

2. Features and benefits

3. Applications

• Power factor correction

• Telecom / Server SMPS

• UPS

• PV inverter

• PC Silverbox

• LED / OLED TV

• Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

VRRM

repetitive peak reverse

voltage

650

V

IO(AV)

limiting average output

current

δ = 0.5 ; Tmb ≤ 129 °C; square-wave pulse;

both diodes conducting;

Fig. 1; Fig. 2; Fig. 3

16

A

Tj

junction temperature

175

°C

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VF

forward voltage

IF = 8 A; Tj = 25 °C; per diode; Fig. 5

-

1.5

1.7

V

IF = 8 A; Tj = 150 °C; per diode; Fig. 5

-

1.8

2.1

V

IF = 8 A; Tj = 175 °C; per diode; Fig. 5

-

1.95

2.25

V

Dynamic characteristics

Qr

recovered charge

IF = 8 A; VR = 400 V; dIF/dt = 500 A/μs;

Tj = 25 °C; per diode; Fig. 7

-

19

-

nC

• Highly stable switching performance

• High forward surge capability IFSM

• Extremely fast reverse recovery time

• Superior in efficiency to Silicon Diode alternatives

• Reduced losses in associated MOSFET

• Reduced EMI

• Reduced cooling requirements

• RoHS compliant

RoHS

halogen-Free

Lead-Free

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WNSC16650CWQ 데이터시트(PDF) 1 Page - WeEn Semiconductors

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