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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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DSA30C150PB 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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DSA30C150PB 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 Schottky Barrier Rectifier DSA30C150PB FEATURES · Dual Rectifier Conduction, Positive Center Tap · Low Power Loss/High Efficiency · High Current Capability, Low Forward Voltage Drop · High Surge Capacity · Guarding for Overvoltage protection · For AC/DC switching adaptor and other switching power supply applications. · Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS · Case: Epoxy, Molded · Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 150 V IF(AV) Average Rectified Forward Current TC= 100℃ 30 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 330 A TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs |
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