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KVR16LS11/8 데이터시트(PDF) 1 Page - Kingston Technology Far East Co. Ltd

부품명 KVR16LS11/8
상세설명  8GB 2Rx8 1G x 64-Bit PC3L-12800 CL11 204-Pin SODIMM
PDF  2 Pages
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제조업체  KINGSTON [Kingston Technology Far East Co. Ltd]
홈페이지  https://www.kingston.com/
Logo KINGSTON - Kingston Technology Far East Co. Ltd

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KVR16LS11/8
8GB 2Rx8 1G x 64-Bit PC3L-12800
CL11 204-Pin SODIMM
DESCRIPTION
This document describes ValueRAM's 1G x 64-bit (8GB)
DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 2Rx8, low
voltage, memory module, based on sixteen 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This
204-pin SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
FEATURES
JEDEC standard 1.35V and 1.5V Power Supply
VDDQ = 1.35V and 1.5V
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6, 5
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 1.18” (30mm), double sided component
Document No. VALUERAM1348-001.C00
05/10/2021 Page 1
Memory Module Specifications
Continued >>
SPECIFICATIONS
s
e
l
c
y
c
1
1
)
D
D
I
(
L
C
Row Cycle Time (tRCmin)
48.125ns (min.)
Refresh to Active/Refresh
260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin)
35ns (min.)
0
-
V
4
9
g
n
it
a
R
L
U
Operating Temperature
0o C to 85o C
Storage Temperature
-55o C to +100o C


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