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P70LF4QL 데이터시트(PDF) 2 Page - Shindengen Electric Mfg.Co.Ltd

부품명 P70LF4QL
상세설명  Power MOSFETs 40V, 70A, N-channel
PDF  7 Pages
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제조업체  SHINDENGEN [Shindengen Electric Mfg.Co.Ltd]
홈페이지  http://www.shindengen.co.jp/
Logo SHINDENGEN - Shindengen Electric Mfg.Co.Ltd

P70LF4QL 데이터시트(HTML) 2 Page - Shindengen Electric Mfg.Co.Ltd

  P70LF4QL Datasheet HTML 1Page - Shindengen Electric Mfg.Co.Ltd P70LF4QL Datasheet HTML 2Page - Shindengen Electric Mfg.Co.Ltd P70LF4QL Datasheet HTML 3Page - Shindengen Electric Mfg.Co.Ltd P70LF4QL Datasheet HTML 4Page - Shindengen Electric Mfg.Co.Ltd P70LF4QL Datasheet HTML 5Page - Shindengen Electric Mfg.Co.Ltd P70LF4QL Datasheet HTML 6Page - Shindengen Electric Mfg.Co.Ltd P70LF4QL Datasheet HTML 7Page - Shindengen Electric Mfg.Co.Ltd  
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Electrical Characteristics (unless otherwise specified : Tc=25℃)
Item
Symbol
Conditions
Ratings
Unit
MIN
TYP
MAX
Drain-Source breakdown
voltage
V
ID=1mA, VGS=0V
40
V
Zero gate voltage drain current
I
VDS=40V, VGS=0V
1
μA
Gate-source leakage current
I
VGS=±20V, VDS=0V
±0.1
μA
Forward transconductance
g
ID=35A, VDS=10V
15
S
Static drain-source on-state
resistance
R
ID=35A, VGS=10V
0.0036 0.0045
Ω
Static drain-source on-state
resistance
R
ID=35A, VGS=4.5V
0.0056 0.007
Ω
Gate threshold voltage
Vth
ID=1mA, VDS=10V
1.5
2
2.5
V
Source-drain diode forward
voltage
V
IS=70A, VGS=0V
1.5
V
Thermal resistance
Rth(j-c)
Junction to case, with heatsink
1.21
℃/W
Total gate charge
Qg
VDD=32V, VGS=10V, ID=70A
49
nC
Gate to source charge
Qgs
VDD=32V, VGS=10V, ID=70A
10
nC
Gate to drain charge
Qgd
VDD=32V, VGS=10V, ID=70A
12
nC
Input capacitance
Ciss
VDS=25V, VGS=0V, f=1MHz
2360
pF
Reverce transfer capacitnce
Crss
VDS=25V, VGS=0V, f=1MHz
150
pF
Output capacitance
Coss
VDS=25V, VGS=0V, f=1MHz
290
pF
Turn-on delay time
td(on)
ID=35A, RL=0.55Ω, VDD=20V, Rg=0Ω,
VGS(+)=10V, VGS(-)=0V
5
ns
Rise time
tr
ID=35A, RL=0.55Ω, VDD=20V, Rg=0Ω,
VGS(+)=10V, VGS(-)=0V
7.5
ns
Turn-off delay time
td(off)
ID=35A, RL=0.55Ω, VDD=20V, Rg=0Ω,
VGS(+)=10V, VGS(-)=0V
26
ns
Fall time
tf
ID=35A, RL=0.55Ω, VDD=20V, Rg=0Ω,
VGS(+)=10V, VGS(-)=0V
6.5
ns
Diode reverse recovery time
trr
IF=70A, VGS=0V, di/dt=100A/μs
35
ns
Diode reverse recovery charge
Qrr
IF=70A, VGS=0V, di/dt=100A/μs
32
nC
※︓See the original Specifications
(BR)DSS
DSS
GSS
fs
DS(ON)
DS(ON)
SD
Shindengen Electric Manufacturing Co., Ltd.
2/7
P70LF4QL_Rev.01(2020.09)



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