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FSL518APG 데이터시트(PDF) 4 Page - ON Semiconductor

부품명 FSL518APG
상세설명  High Performance Switcher Integrated with HV Startup and SENSEFET
PDF  27 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
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FSL518APG 데이터시트(HTML) 4 Page - ON Semiconductor

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FSL518H, FSL538H, FSL518A, FSL538A
www.onsemi.com
4
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DRAIN Pin Voltage
VDS
−0.3 to 800
V
VCC Pin Voltage
VCC
−0.3 to 26
V
Feedback Pin Voltage
VFB
−0.3 to 5.0
V
Compensation Pin Voltage
VCOMP
−0.3 to 5.0
V
Line-detection Pin Voltage
VLINE
−0.3 to VCC
V
DRAIN Pin Pulsed Current (Note 3)
FSL518H/A
FSL538H/A
ID-PULSE
2.1
2.8
A
Single Pulse Avalanche Energy (Note 4)
FSL518H/A
FSL538H/A
EAS
6.0
11.7
mJ
Total Power Dissipation (PDIP−7)
FSL518H/A & FSL538H/A
PD
1.25
W
Junction Temperature (Note 5)
TJ
150
°C
Operating Junction Temperature (Note 6)
TJ
−40 to +125
°C
Storage Temperature
TSTG
−55 to +150
°C
ESD Capability HBM, JESD22−A114
ESD Capability HBM, JESD22−A114 (Except DRAIN pin)
1000
2000
V
ESD Capability CDM, JESD22−C101
1000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
3. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty and junction temperature.
4. L= 45 mH, starting TJ = 25°C.
5. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics
6. Junction temperature can limit maximum output power of power converter controlled by the device.
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Thermal Characteristics, PDIP−7
Thermal Resistance, Junction-to-Air (Note 7)
FSL518H/A & FSL538H/A
Thermal Reference, Junction-to-Lead (Note 7)
FSL518H/A & FSL538H/A
RqJA
RyJL
100
18
°C/W
7. JEDEC recommended environment, JESD51−2, and test board, JESD51−3, with minimum land pattern.
ELECTRICAL CHARACTERISTICS
TJ = −40 to +125°C and VCC = 14 V unless otherwise specified.
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
SENSEFET Section
MOSFET Peak Current Limit
TJ = 25°C, Duty = 60%
di/dt = 100 mA/ms FSL518H
di/dt = 100 mA/ms FSL518A
di/dt = 143 mA/ms FSL538H
di/dt = 143 mA/ms FSL538A
ILIM
428
560
614
790
460
610
660
860
492
660
706
930
mA
Drain-to-Source On-State Resistance
MOSFET ON, TJ = 25°C
FSL518H/A, IDRAIN = 0.46 A
FSL538H/A, IDRAIN = 0.66 A
RDS(ON)
6.3
3.8
8.0
4.6
Ω
Output Capacitance (Note 9)
VDS = 480 V, VGS = 0 V, f = 1 MHz,
TJ = 25°C
FSL518H/A
FSL538H/A
COSS
3.8
5.0
pF



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