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FUSB251 데이터시트(PDF) 5 Page - ON Semiconductor

부품명 FUSB251
상세설명  Type-C CC and SBU Protection IC
PDF  19 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

FUSB251 데이터시트(HTML) 5 Page - ON Semiconductor

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FUSB251
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5
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Conditions
Min
Typ
Max
Units
TJ
Junction Temperature
−40
+150
°C
TSTG
Storage Temp
−65
+150
°C
VDD
Supply voltage
Slew Rate 2 V/ms (rising), 1 V/ms (falling)
−0.5
12.0
V
VCC
Vccx to GND
−0.5
24
V
VSBU
VSBUx to GND
−0.5
24
V
VCCx_H and
VSBUx_H
VCCX_H, VSBUx_H to GND
−0.5
6.0
V
ICCSW
DC CC switch current
1.25
A
ISBUSW
DC SBU switch current
100
mA
IIK
DC input diode current
−50
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
ESD RATINGS − JEDEC / IEC SPECIFICATION
Electro Static Discharge (ESD) Specifications
Condition
Value
Unit
Human Body Model, JEDEC JESD22−A114
CCx and SBUx pins to GND
±5000
V
Other pins
±2000
Charged Device Model, JEDEC JESD22−C101
All pins
±1000
IEC 61000−4−2 System ESD
CCx and SBUx pins to GND
Air−gap Discharge
±15000
Contact Discharge
±8000
IEC 61000−4−5 Lightning and Surge
CCx and SBUx pins to GND
±35
OPERATING CONDITIONS
Symbol
Parameter
Conditions
MIn
Typ
Max
Unit
VDD
Supply Voltage Range
2.7
3.8
5.5
V
TA
Operating Ambient Temperature
−40
+85
°C
TIN + 0.3
Junction Temperature
−40
+125
°C
VCCx,
VCCx_H
CC1 CC2, CC1_H, CC2_H voltage
0
5.5
V
VSBUx,
VSBUx_H
SBU1, SBU2, SBU1_H,
SBU2_H voltage
0
4.2
V
C_CAP
External capacitor capacitance
0.1
1.0
mF
VPU
Pull up resistor power rail of SDA, SCL
and INTB
1.7
VDD
V
ICCSW
CC switch current
TA = 25°C and TA = 85°C
1000 (TA = 25°C),
800 (TA = 85°C)
mA
ISBU
SBU switch current
50
mA
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.



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