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M50FLW040AN5TP 데이터시트(PDF) 26 Page - STMicroelectronics |
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M50FLW040AN5TP 데이터시트(HTML) 26 Page - STMicroelectronics |
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26 / 52 page ![]() M50FLW040A, M50FLW040B 26/52 PROGRAM AND ERASE TIMES The Program and Erase times are shown in Table 18.. Table 18. Program and Erase Times Note: 1. TA = 25°C, VCC = 3.3V 2. Sampled only, not 100% tested. 3. Time to program two Bytes. 4. Time to program four Bytes. 5. Time obtained executing the Quadruple Byte Program command. Parameter Interface Test Condition Min Typ(1) Max Unit Byte Program 10 200 µs Double Byte Program FWH VPP = 12V ± 5% 10(3) 200 µs Quadruple Byte Program A/A Multiplexed FWH VPP = 12V ± 5% 10(4) 200 µs Block Program VPP = 12V ± 5% 0.1(5) 5 s VPP = VCC 0.4 5 Sector Erase (4 KBytes)(2) VPP = 12V ± 5% 0.4 4 s VPP = VCC 0.5 5 Block Erase (64 KBytes) VPP = 12V ± 5% 0.75 8 s VPP = VCC 110 Chip Erase A/A Multiplexed VPP = 12V ± 5% 5s Program/Erase Suspend to Program pause(2) 5 µs Program/Erase Suspend to Block Erase/ Sector Erase pause(2) 30 µs |
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