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RTO50 데이터시트(PDF) 2 Page - Vishay Siliconix |
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RTO50 데이터시트(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() Document Number: 50035 Revision 14-Jan-05 www.vishay.com 18 RTO 50 Vishay Sfernice For technical questions, contact sfer@vishay.com PERFORMANCE TESTS CONDITIONS TYPICAL DRIFTS NF EN 140000 Momentary Overload 2Pr/5s ± (0.25% + 0.05Ω) Us < 1.5UL NF EN 140000 Rapid Temperature Change CEI 68214 Tests Na ± (0.5% + 0.05Ω) 5 cycles - 55°C to + 155°C Load Life NF EN 140000 Pr at + 25°C CEI 115_1 ± (1% + 0.05Ω) Humidity (Steady State) MIL STD 202 ± (0.5% + 0.05Ω) Method 103 B Cond. D Vibration MIL STD 202 ± (0.2% + 0.05Ω) Method 204 Cond. D Terminal Strength MIL STD 202 ± (0.2% + 0.05Ω) Method 211 Cond. A1 Power Resistor Thick Film Technology Resistance Values ≥ 0.010Ω ≥ 0.015Ω ≥ 0.1Ω ≥ 0.5Ω Tolerances ± 1% at ± 10% Standard ± 900ppm/°C ± 700ppm/°C ± 250ppm/°C ± 150ppm/°C Temperature Coefficient SPECIAL FEATURES CHOICE OF THE HEATSINK The user must choose according to the working conditions of the component (power, room temperature). Maximum working temperature must not exceed 155°C. The dissipated power is simply calculated by the following ratio: P = ∆T [RTH (j-c) + RTH (c-a)] (1) P: expressed in W T: difference between maximum working temperature and room temperature. RTH: (j-c): thermal resistance value measured between resistive layer and outer side of the resistor. It is the thermal resistance of the component: (Special Features Table) RTH: (c-a): thermal resistance value measured between outer side of the resistor and room temperature. It is the thermal resistance of the heatsink itself (type, shape) and the quality of the fastening device. Example: RTH: (c-a) for RTO 50 power rating 13 W at ambient temperature + 30°C. Thermal resistance RTH (j-c): 25°C/W Considering equation (1) we have: ∆T ≤ 155°C - 30°C ≤ 125°C RTH (j-c) + RTH (c-a) = = = 9.6°C/W RTH (c-a) ≤ 9.6°C/W - 2.6°C/W ≤ 7°C/W ∆T P 125 13 |
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