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2SC6064 데이터시트(PDF) 2 Page - Sanyo Semicon Device

부품명 2SC6064
상세설명  NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
PDF  4 Pages
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제조업체  SANYO [Sanyo Semicon Device]
홈페이지  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6064 데이터시트(HTML) 2 Page - Sanyo Semicon Device

  2SC6064 Datasheet HTML 1Page - Sanyo Semicon Device 2SC6064 Datasheet HTML 2Page - Sanyo Semicon Device 2SC6064 Datasheet HTML 3Page - Sanyo Semicon Device 2SC6064 Datasheet HTML 4Page - Sanyo Semicon Device  
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2SC6064
No. A0270-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=50mA
170
340
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=50mA
0.9
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
80
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
6
V
Turn-ON Time
ton
See specified Test Circuit.
30
ns
Storage Time
tstg
See specified Test Circuit.
330
ns
Fall Time
tf
See specified Test Circuit.
40
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7519-003
VR
RB
RL
VBE= --5V
VCC=25V
++
INPUT
OUTPUT
100
µF
470
µF
PW=20
µs
IB1
IB2
D.C.
≤1%
50
Ω
IC=10IB1= --10IB2=700mA
12
3
6.9
0.5
0.6
2.5
1.45
1.0
0.9
0.45
2.54
2.54
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
1.2
2.0
1.6
0.8
0.4
0
0
0.4
1.2
0.8
1.6
0.2
0.6
1.4
1.0
1.8
2.0
IT10515
IB=0mA
1mA
2mA
3mA
5mA
10mA
1.0
1.8
1.4
0.6
0.2
IT10516
1.4
2.0
0.8
0.2
1.6
1.0
0.4
1.8
1.2
0.6
0
0
0.2
0.4
0.6
0.8
1.0
1.2
VCE=2V
15mA
20mA
25mA
30mA



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