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VS-ST180SVPBF 데이터시트(PDF) 2 Page - Vishay Siliconix

부품명 VS-ST180SVPBF
상세설명  Phase Control Thyristors (Stud Version), 200 A
PDF  8 Pages
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제조업체  VISHAY [Vishay Siliconix]
홈페이지  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VS-ST180SVPBF 데이터시트(HTML) 2 Page - Vishay Siliconix

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VS-ST180S...VPbF Series
www.vishay.com
Vishay Semiconductors
Revision: 28-Sep-17
2
Document Number: 96112
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave
200
A
85
°C
Maximum RMS on-state current
IT(RMS)
DC at 76 °C case temperature
314
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
5000
t = 8.3 ms
5230
t = 10 ms
100 % VRRM 
reapplied
4200
t = 8.3 ms
4400
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
125
kA2s
t = 8.3 ms
114
t = 10 ms
100 % VRRM 
reapplied
88
t = 8.3 ms
81
Maximum I2
t for fusing
I2
t
t = 0.1 to 10 ms, no voltage reapplied
1250
kA2
s
Low level value of threshold voltage
VT(TO)1
(16.7 % x
 x I
T(AV) < I <  x IT(AV)), TJ = TJ maximum
1.08
V
High level value of threshold voltage
VT(TO)2
(I >
 x I
T(AV)), TJ = TJ maximum
1.14
Low level value of on-state slope resistance
rt1
(16.7 % x
 x I
T(AV) < I <  x IT(AV)), TJ = TJ maximum
1.18
m
High level value of on-state slope resistance
rt2
(I >
 x I
T(AV)), TJ = TJ maximum
1.14
Maximum on-state voltage
VTM
Ipk = 570 A, TJ = 125 °C, tp = 10 ms sine pulse
1.75
V
Maximum holding current
IH
TJ = TJ maximum, anode supply 12 V resistive load
600
mA
Maximum (typical) latching current
IL
1000 (300)
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise of
turned-on current
dI/dt
Gate drive 20 V, 20
, t
r  1 μs
TJ = TJ maximum, anode voltage  80 % VDRM
1000
A/μs
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
μs
Typical turn-off time
tq
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs, 
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs
100
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
30
mA



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