FBSGAM02PR50 datasheet(8/33 Pages) EPC-CO

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FBS-GAM02-P-R50 Datasheet

20.) When connected in the half-bridge configuration and with a motor load in the coast mode (BIN = TIN = low logic level), the motor

back-EMF (BEMF) caused by rotation (generator effect) will cause a “leakage” current to flow into the switching node of the GAM02

module (BOUT/TOUT common connection). This leakage current is due to the high-side driver biasing circuitry. Due to the power

ratings of the internal components, the peak value of the BEMF should be limited to that value shown in the Absolute Maximum

Ratings. Additionally, when operating in the coast mode, in order to guarantee proper operation of the half-bridge circuit, the high-

side driver bootstrap capacitor

MUST be recharged periodically in order to assure that the high-side gate driver is biased properly,

and that the high-side power switch responds correctly to the TIN logic input. If the high-side bootstrap capacitor is not periodically

recharged, then potentially destructive currents may flow in the GAM02 module.

21.) Setting the BIN-to-TIN and TIN-to-BIN delay times, td1 and td2, to the values shown in the table guarantees shoot-through free

operation of the GAM02 module when connected in the half-bridge configuration.

Specification Notes (continued)

FBSGAM02PR50 데이터시트(PDF) 8 Page - Efficient Power Conversion Corporation.