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ACE1S100B 데이터시트(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE1S100B 데이터시트(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 2 page ![]() ACE1S100B N-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description ⚫ DC/DC Converters in Computing, servers, POL ⚫ Isolated DC/DC Converters in Telecom and Industrial Features ⚫ VDS=100V, ID=8.5A ⚫ RDS(ON)1@VGS = 10V, TYP 95mΩ ⚫ RDS(ON)1@VGS = 6V, TYP 106mΩ ⚫ RDS(ON)2@VGS = 4.5V, TYP 120mΩ Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TC=25℃ ID 8.5 A TC=100℃ 6.8 Drain Current (Pulsed)*B IDM 60 A Power Dissipation TC=25℃ PD 2.08 W Operating temperature / storage temperature TJ/TSTG -55~150 °C A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current r ating is based on the t≤ 10s junction to ambient thermal resistance rating. Thermal Resistance Ratings Parameter Symbol Maximum Unit Maximum Junction-to-Ambient t ≤ 10s RthJA 25 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 6 Ordering information ACE1S100B XX + H PD:PDFN3*3-8L Pb - free Halogen - free |
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