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HMC8108LC5TR-R5 데이터시트(PDF) 4 Page - Analog Devices

부품명 HMC8108LC5TR-R5
상세설명  9 GHz to 10 GHz, X-Band, GaAs, MMIC, Low Noise Converter
PDF  18 Pages
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HMC8108LC5TR-R5 데이터시트(HTML) 4 Page - Analog Devices

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HMC8108
Data Sheet
Rev. 0 | Page 4 of 18
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Rating
Drain Bias Voltage
LNA_VD1
5.8 V
LNA_VD2
4.8 V
BUFF_VD
4.2 V
Gate Bias Voltage
LNA_VG1
−2 V to + 0.15 V
LNA_VG2
−2 V to + 0.15 V
MIX_VG
−2 V to + 0.15 V
BUFF_VG
−2 V to + 0.15 V
VCTRL
−2 V to + 0.15 V
RF Input Power
20 dBm
LO Input Power
24 dBm
Maximum Peak Reflow Temperature (MSL3)1
260°C
Maximum Junction Temperature
165°C
Operating Temperature Range
−40°C to +85°C
Storage Temperature Range
−65°C to 150°C
Electrostatic Discharge (ESD) Sensitivity
Human Body Model (HBM)
Class 0 (150 V)
Field Induced Charged Device Model (FICDM)
Class C3 (250 V)
1
See the Ordering Guide section.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
Thermal performance is directly linked to printed circuit board
(PCB) design and operating environment. Careful attention to
PCB thermal design is required.
Table 3. Thermal Resistance
Package Type
θJA
θJC
Unit
E-32-11
93
119.47
°C/W
1
See JEDEC standard JESD51-2 for additional information on optimizing the
thermal impedance (PCB with 3 × 3 vias).
ESD CAUTION



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