| 전자부품 데이터시트 검색엔진 |
|
MIC2103 데이터시트(PDF) 25 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
MIC2103 데이터시트(HTML) 25 Page - Microchip Technology |
|
25 / 42 page ![]() 2017 Microchip Technology Inc. DS20005899A-page 25 MIC2103/4 the gate voltage with minimal droop for the power stroke (high-side switching) cycle, i.e., ∆BST = 10 mA x 3.33 μs/0.1 μF = 333 mV. When the low-side MOSFET is turned back on, CBST is recharged through D1. A small resistor RG, which is in series with CBST, can be used to slow down the turn-on time of the high-side N-channel MOSFET. The drive voltage is derived from the VDD supply voltage. The nominal low-side gate drive voltage is VDD and the nominal high-side gate drive voltage is approximately VDD – VDIODE, where VDIODE is the voltage drop across D1. An approximate 30 ns delay between the high-side and low-side driver transitions is used to prevent current from simultaneously flowing unimpeded through both MOSFETs. |
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |