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NSPM3042MXT5G 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 NSPM3042MXT5G
상세설명  4.8 V Bidirectional ESD and Surge Protection Device
PDF  8 Pages
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제조업체  ONSEMI [ON Semiconductor]
홈페이지  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NSPM3042MXT5G 데이터시트(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Bi−Directional Surge Protection
IPP
IPP
V
I
IR
IT
IT
IR
VRWM
VC VBR
VRWM
VC
VBR
RDYN
RDYN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
I/O Pin to GND
Pin 1 to 2
Pin 2 to 1
4.8
4.5
V
Breakdown Voltage
VBR
IT = 1 mA, I/O Pin to GND
Pin 1 to 2
Pin 2 to 1
4.85
4.55
5.2
5.0
6.0
6.0
V
Reverse Leakage Current
IR
VRWM = 4.8 V, Pin 1 to Pin 2
VRWM = 4.5 V, Pin 2 to Pin 1
0.5
0.5
mA
Clamping Voltage
VC
IEC61000−4−2,
±8 kV Contact
See Figures 1 & 2
V
Clamping Voltage TLP (Note 1)
VC
IPP = 8 A, IEC61000−4−2 Level 2 Equivalent
(
±4 kV Contact, ± 8 kV Air)
5.50
V
IPP = 16 A, IEC61000−4−2 Level 4 Equivalent
(
±8 kV Contact, ± 15 kV Air)
5.74
Reverse Peak Pulse Current
IPP
IEC61000−4−5 (8 x 20
ms) per Figure 14
43
A
Clamping Voltage 8x20
ms
Waveform per Figure 14 (Note 2)
VC
IPP = 1 A
IPP = 43 A
4.9
7.4
6.2
8.0
V
Dynamic Resistance
RDYN
100 ns TLP Pulse
0.03
W
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz
80
200
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.
TLP condtions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window: t1 = 70 ns to t2 = 90 ns.
2. Non−repetitive current pulse at TA = 25°C, per IEC61000−4−5 waveform.



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