TND027SW, 027TD

No.7437-1/6

Features

•

N-channel MOSFET built in.

•

Overheat protection. (Self recovery type)

•

Overcurrent protection. (Self recovery type current limiting function)

•

Overvoltage protection.

•

Incorporates two sets of circuit.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDS

60

V

Output Current

IO(DC)

1.5

A

Input Voltage

VIN

--0.3 to +10

V

TND027SW

1.3

W

TND027SW

1.7

W

Allowable Power Dissipation

PD

TND027TD

0.8

W

TND027TD

1.3

W

Operating Supply Voltage

VDS(opr)

40

V

Operating Temperature

Topr

--40 to +85

°C

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Ordering number : ENN7437A

O2203 TS IM / 51503 TS IM TA-100479

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

TND027SW

TND027TD

ExPD(Excellent Power Device)

Lowside Power Switch Lamp-, Solenoid-,

and Motor-Driving Applications