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TGA2976-SMEVB 데이터시트(PDF) 2 Page - Qorvo, Inc |
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TGA2976-SMEVB 데이터시트(HTML) 2 Page - Qorvo, Inc |
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2 / 18 page ![]() TGA2976-SM 0.1 – 3.0 GHz 10 W GaN Power Amplifier Data Sheet Rev. D, May 2020 | Subject to change without notice 2 of 18 www.qorvo.com © 2020 Qorvo US, Inc. All rights reserved. ® Recommended Operating Conditions Parameter Value Drain Voltage (VD) 40 V Drain Current (IDQ) 360 mA Gate Voltage Range (VG1) −2.8 to −2.0 V Gate Voltage (VG2) +17.7 V (Typ.) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 80 V Gate Voltage Range (VG1) -8 to 0 V Gate Voltage Range (VG2) 0 to 40 V Drain Current (ID) 760 mA Gate Current (IG1) See plot on pg. 3 Gate Current (IG2) See plot on pg. 3 Power Dissipation (PDISS), 85°C 28 W Input Power (PIN ), CW, 50 Ω, 85°C, 33 dBm Input Power (PIN), CW, VSWR 3:1, VD = 40V, 85°C 33 dBm Mounting Temperature 260°C Storage Temperature -55 to 150°C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Parameter Conditions (1) Min Typ Max Units Operational Frequency Range 0.1 3.0 GHz Small Signal Gain > 20 dB Input Return Loss > 5 dB Output Return Loss > 9 dB Output Power PIN = 27 dBm > 40 dBm Power Added Efficiency PIN = 27 dBm, mid-band 48 % 3rd Order Intermodulation 120 mA, POUT/tone = 28 dBm -30 dBc 5th Order Intermodulation 120 mA, POUT/tone = 28 dBm -38 dBc Small Signal Gain Temperature Coefficient -0.03 dB/°C Output Power Temperature Coefficient -0.009 dBm/°C Recommended Operating Voltage 40 50 V Notes: 1. Test conditions unless otherwise noted: 25°C , VD = 40 V, IDQ = 360 mA, VG1 = -2.4 V, VG2 = +17.7 V |
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