AT45DB081E datasheet(20/79 Pages) DIALOG

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AT45DB081E

DS-AT45DB081E–028K–03-2021

The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase

properly. If an erase error arises, it is indicated by the EPE bit in the Status Register.

Table 7-1.

Block Erase Addressing

7.9

Sector Erase

The Sector Erase command can be used to individually erase any sector in the main memory.

The main memory array is comprised of nine sectors, and only one sector can be erased at a time. To perform an

erase of Sector 0a or Sector 0b with the standard DataFlash page size (264 bytes), an opcode of 7Ch must be

clocked into the device followed by three address bytes comprised of three dummy bits, nine page address bits

(PA11 - PA3), and 12 dummy bits. To perform a Sector 1-15 erase, an opcode of 7Ch must be clocked into the

device followed by three address bytes comprised of three dummy bits, four page address bits (PA11 - PA8), and

17 dummy bits.

To perform a Sector 0a or Sector 0b erase with the binary page size (256 bytes), an opcode of 7Ch must be

clocked into the device followed by three address bytes comprised of four dummy bits, nine page address bits (A19

- A11), and 11 dummy bits. To perform a Sector 1-15 erase, an opcode of 7Ch must be clocked into the device

followed by four dummy bits, four page address bits (A19 - A16), and 16 dummy bits.

The page address bits are used to specify any valid address location within the sector to be erased. When a low-to

high transition occurs on the CS pin, the device erases the selected sector. The erase operation is internally self-

timed and takes a maximum time of tSE. During this time, the RDY/BUSY bit in the Status Register indicates that

the device is busy.

PA11/

A19

PA10/

A18

PA9/

A17

PA8/

A16

PA7/

A15

PA6/

A14

PA5/

A13

PA4/

A12

PA3/

A11

PA2/

A10

PA1/

PA0/

Block

•

508

509

510

511

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