ECH8655R-R-TL-H datasheet(2/7 Pages) ONSEMI

2 / 7 page

ECH8655R−R−TL−H

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SPECIFICATIONS

ABSOLUTE MAXIMUM RATINGS at TA = 25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain−to−Source Voltage

VDSS

Gate−to−Source Voltage

VGSS

±12

Drain Current (DC)

Drain Current (Pulse)

IDP

PW ≤ 10 ms, duty cycle ≤ 1%

Allowable Power Dissipation

When mounted on ceramic substrate (900 mm2 × 0.8 mm)

1 unit

1.4

Total Dissipation

When mounted on ceramic substrate (900 mm2 × 0.8 mm)

1.5

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

ELECTRICAL CHARACTERISTICS at TA = 25°C

Parameter

Symbol

Conditions

Ratings

Unit

Min

Typ

Max

Drain−to−Source Breakdown Voltage

V(BR)DSS

ID = 1 mA,

VGS = 0 V

Zero−Gate Voltage Drain Current

IDSS

VDS = 20 V,

VGS = 0V

Gate−to−Source Leakage Current

IGSS

VGS = ±8 V,

VDS = 0 V

±10

Cutoff Voltage

VGS(off)

VDS = 10 V,

ID = 1 mA

0.5

1.3

Forward Transfer Admittance

| yfs |

VDS = 10 V,

ID = 4.5 A

4.8

Static Drain−to−Source On−State

Resistance

RDS(on)1

ID = 4.5 A,

VGS = 4.5 V

RDS(on)2

ID = 4.5 A,

VGS = 4.0 V

10.5

13.5

16.5

RDS(on)3

ID = 4.5 A,

VGS = 3.1 V

RDS(on)4

ID = 2 A,

VGS = 2.5 V

Turn−ON Delay Time

td(on)

See specified

Test Circuit.

320

Rise Time

1100

Turn−OFF Delay Time

td(off)

2400

Fall Time

2100

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