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TBD 데이터시트(PDF) 3 Page - Integrated Circuit Systems |
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TBD 데이터시트(HTML) 3 Page - Integrated Circuit Systems |
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3 / 14 page ![]() 83026BMI-01 www.icst.com/products/hiperclocks.html REV. A JANUARY 16, 2006 3 Integrated Circuit Systems, Inc. ICS83026I-01 LOW SKEW, 1-TO-2 DIFFERENTIAL-TO-LVCMOS/LVTTL FANOUT BUFFER TABLE 3A. POWER SUPPLY DC CHARACTERISTICS, V DD = 3.3V ± 5%, VDDO = 1.71V TO 3.465V, TA = -40°C TO 85°C l o b m y Sr e t e m a r a Ps n o i t i d n o C t s e Tm u m i n i Ml a c i p y Tm u m i x a Ms t i n U V D D e g a t l o V y l p p u S e v i t i s o P 5 3 1 . 33 . 35 6 4 . 3V V O D D e g a t l o V y l p p u S t u p t u O 5 3 1 . 33 . 35 6 4 . 3V 5 7 3 . 25 . 25 2 6 . 2V 1 7 . 18 . 19 8 . 1V I D D t n e r r u C y l p p u S r e w o P 0 1A m I O D D t n e r r u C y l p p u S t u p t u O 3A m TABLE 3B. LVCMOS / LVTTL DC CHARACTERISTICS, V DD = 3.3V ± 5%, VDDO = 2.375V TO 3.465V, TA = -40°C TO 85°C l o b m y Sr e t e m a r a Ps n o i t i d n o C t s e Tm u m i n i Ml a c i p y Tm u m i x a Ms t i n U V H I e g a t l o V h g i H t u p n IE O2 V D D 3 . 0 +V V L I e g a t l o V w o L t u p n IE O3 . 0 -8 . 0V I H I t n e r r u C h g i H t u p n IE OV D D V = N I V 5 6 4 . 3 =5 A µ I L I t n e r r u C w o L t u p n IE OV D D V , V 5 6 4 . 3 = N I V 0 =0 5 1 -A µ V H O ; e g a t l o V h g i H t u p t u O1 E T O N V O D D V 5 3 1 . 3 =6 . 2V V O D D V 5 7 3 . 2 =8 . 1V V L O ; e g a t l o V w o L t u p t u O1 E T O N 5 . 0V 0 5 h t i w d e t a n i m r e t s t u p t u O : 1 E T O N Ω V o t O D D , n o i t c e s n o i t a m r o f n I t n e m e r u s a e M r e t e m a r a P e e S . 2 / . s m a r g a i d " t i u c r i C t s e T d a o L t u p t u O " ABSOLUTE MAXIMUM RATINGS Supply Voltage, V DD 4.6V Inputs, V I -0.5V to V DD + 0.5 V Outputs, V O -0.5V to V DDO + 0.5V Package Thermal Impedance, θ JA 8 Lead SOIC 112.7°C/W (0 lfpm) 8 Lead TSSOP 101.7°C/W (0 lfpm) Storage Temperature, T STG -65°C to 150°C NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.These ratings are stress specifications only. Functional operation of product at these conditions or any conditions be- yond those listed in the DC Characteristics or AC Character- istics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. TABLE 3C. LVCMOS / LVTTL DC CHARACTERISTICS, V DD = 3.3V ± 5%, VDDO = 1.8V ± 5%, T A = -40°C TO 85°C l o b m y Sr e t e m a r a Ps n o i t i d n o C t s e Tm u m i n i Ml a c i p y Tm u m i x a Ms t i n U V H I e g a t l o V h g i H t u p n IE O2 V D D 3 . 0 +V V L I e g a t l o V w o L t u p n IE O3 . 0 -8 . 0V I H I t n e r r u C h g i H t u p n IE OV D D V = N I V 5 6 4 . 3 =5 A µ I L I t n e r r u C w o L t u p n IE OV D D V , V 5 6 4 . 3 = N I V 0 =0 5 1 -A µ V H O e g a t l o V h g i H t u p t u O I H O A µ 0 0 1 - =V O D D 2 . 0 -V I H O A m 2 - =V O D D 5 4 . 0 -V V L O e g a t l o V w o L t u p t u O I L O A µ 0 0 1 =2 . 0V I L O A m 2 =5 4 . 0V |
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