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LM3D0210 데이터시트(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM3D0210 데이터시트(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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1 / 8 page ![]() Product Summary BVDSS RDS(ON) ID 20V 22m 6.5A -20V 37m -4A Description These N+P Dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Mechanical Data Case: DFN 3.3×3.3-8L Circuit Configuration: See diagram below Applications Notebook Networking Load Switch Hand-held Instruments Features Fast switching Green Device Available Suit for 1.8V Gate Drive Applications High Power and current handing capability Rev 2.0 : www.leiditech.com 12.01.2019 1/8 LM3D0210 N and P-Channel MOSFETS |
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