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LM3420 데이터시트(PDF) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

부품명 LM3420
상세설명  N-Channel Enhancement Mode Power MOSFET
PDF  6 Pages
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제조업체  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
홈페이지  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM3420 데이터시트(HTML) 1 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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Enhancement Mode Power MOSFET
Description
The LM3420 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a
uni-directional or bi-directional load switch.
General Features
●
VDS = 20V,ID = 6A
RDS(ON) < 35mΩ @ VGS=2.5V
RDS(ON) < 28mΩ @ VGS=4.5V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Application
●
Uni-directional Load switch
●
Bi-directional Load switch
D
G
S
Schematic diagram
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
3420
LM3420
SOT-23
Ø180mm
8 mm
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
Drain Current-Continuous
ID
6
A
Drain Current-Pulsed
(Note 1)
IDM
30
A
Maximum Power Dissipation
PD
1.25
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
RθJA
100
/W
℃
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
22
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
-
-
1
μA
Rev : 01.06.2014
1/6
www.leiditech.com
LM3420
N-Channel


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