FDMC0310AS datasheet(2/8 Pages) ONSEMI

2 / 8 page

Semiconductor Components Industries, LLC.

August-2017, Rev.3

FDMC0310AS

N-Channel PowerTrench® SyncFETTM

30 V, 21 A, 4.4 m

Features

Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 19 A

Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17.5 A

Advanced package and silicon combination for low rDS(on) and

high efficiency

SyncFETTM Schottky Body Diode

MSL1 robust package design

100% UIL tested

RoHS Compliant

General Description

The FDMC0310AS has been designed to minimize losses in

power conversion application. Advancements in both silicon and

package technologies have been combined to offer the lowest

rDS(on) while maintaining excellent switching performance.This

device has the added benefit of an efficient monolithic schottky

body diode.

Applications

Synchronous Rectifier for DC/DC Converters

Notebook Vcore/GPU low side switch

Networking Point of Load low side switch

Telecom secondary side rectification

MLP 3.3x3.3

Bottom

Top

Pin 1

MOSFET Maximum Ratings T

A = 25 °C unless otherwise noted

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

VDS

Drain to Source Voltage

VDSt

Drain to Source Transient Voltage ( t Transient < 100 ns)

VGS

Gate to Source Voltage

(Note 4)

±20

Drain Current -Continuous

TC = 25°C

-Continuous

TA = 25°C

(Note 1a)

-Pulsed

100

EAS

Single Pulse Avalance Energy

(Note 3)

Power Dissipation

TC = 25°C

Power Dissipation

TA = 25°C

(Note 1a)

2.4

TJ, TSTG

Operating and Storage Junction Temperature Range

-55 to +150

°C

RθJC

Thermal Resistance, Junction to Case

3.4

°C/W

RθJA

Thermal Resistance, Junction to Ambient

(Note 1a)

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMC0310AS

MLP 3.3X3.3

13 ’’

12 mm

3000 units

Publication Order Number:

FDMC0310AS/D

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