1.

Electrical Specifications

This section provides the electrical specifications of the MSCSM170TAM15CTPAG device.

1.1

SiC MOSFET Characteristics (Per SiC MOSFET)

The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM170TAM15CTPAG device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Maximum Ratings

Unit

Drain-Source voltage

1700

V

Continuous drain current

179

A

142

Pulsed drain current

360

Gate-Source voltage

–10/23

V

Drain-Source ON resistance

15

mΩ

Power dissipation

843

W

The following table lists the electrical characteristics per SiC MOSFET of the MSCSM170TAM15CTPAG device.

Table 1-2. Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Zero gate voltage

drain current

—

30

300

µA

Drain–Source on

resistance

—

11.7

15

mΩ

—

20.8

—

Gate threshold

voltage

1.8

3.2

—

V

Gate–Source

leakage current

—

—

300

nA

MSCSM170TAM15CTPAG

Electrical Specifications

Datasheet

DS00003964A-page 3