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FDMS86255 데이터시트(PDF) 1 Page - ON Semiconductor |
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FDMS86255 데이터시트(HTML) 1 Page - ON Semiconductor |
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1 / 7 page ![]() DATA SHEET www.onsemi.com © Semiconductor Components Industries, LLC, 2002 August, 2021 − Rev. 0 1 Publication Order Number: FDMS86255/D MOSFET – N-Channel, Shielded Gate, POWERTRENCH® 150V, 45A, 12.4mW FDMS86255 Description This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance. Features • Shielded Gate MOSFET Technology • Max RDS(on) = 12.4 mW at VGS = 10 V, ID = 10 A • Max RDS(on) = 15.5 mW at VGS = 6 V, ID = 8 A • Advanced Package and Silicon Combination for Low RDS(on) and High Efficiency • Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery • MSL1 Robust Package Design • 100% UIL Tested • RoHS Compliant • These Device is Halogen Free Applications • OringFET / Load Switching • Synchronous Rectification • DC−DC Conversion ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. MARKING DIAGRAM PQFN8 5X6, 1.27P CASE 483AG $Y&Z&3&K $Y = Logo &Z = Assembly Location &3 = Date Code (Year and Week) &K = Specific Device Code S D G S S D D D Top Bottom Pin 1 Pin 1 D D D D S S S G |
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