FDPC8016S

www.onsemi.com

11

SyncFET Schottky Body Diode Characteristics

ON’s SyncFET process embeds a Schottky diode in

parallel with PowerTrench MOSFET. This diode exhibits

similar characteristics to a discrete external Schottky diode

in parallel with a MOSFET. Figure 27 shows the reverse

recovery characteristic of the FDPC8016S.

Schottky barrier diodes exhibit significant leakage at high

temperature and high reverse voltage. This will increase the

power in the device.

Figure 27. FDPC8016S SyncFET Body Diode Reverse

Recovery Characteristic

Figure 28. SyncFET Body Diode Reverse Leakage vs.

Drain-Source Voltage

50

100

150

200

250

300

350

400

−5

0

5

10

15

20

25

30

35

40

di / dt = 200 A/

TIME (ns)

0

5

10

15

20

25

10

−6

10

−5

10

−4

10

−3

10

−2

V

ms

POWERTRENCH is a registered trademark and SyncFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its

subsidiaries in the United States and/or other countries.