The following table lists the dynamic characteristics per SiC MOSFET of the MSCSM120HM083CAG device.

Table 1-3. Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Input capacitance

f = 1 MHz

—

9

—

nF

Output capacitance

—

0.81

—

Reverse transfer

capacitance

—

0.07

—

Total gate charge

—

696

—

nC

Gate-source charge

—

123

—

Gate-drain charge

—

150

—

Turn-on delay time

—

56

—

ns

Rise time

—

55

—

Turn-off delay time

—

166

—

Fall time

67

—

Turn-on energy

Inductive switching

3

—

mJ

Turn-off energy

2.7

—

Internal gate resistance

—

2

—

Ω

Junction-to-case thermal resistance

—

—

0.144

°C/W

The following table lists the body diode ratings and characteristics per SiC MOSFET of the MSCSM120HM083CAG

device.

Table 1-4. Body Diode Ratings and Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Diode forward voltage

—

4

—

V

—

4.2

—

Reverse recovery time

—

90

—

ns

Reverse recovery charge

—

1650

—

nC

Reverse recovery current

—

41

—

A

MSCSM120HM083CAG

Electrical Specifications

Datasheet

DS00003930A-page 4