MSCSM170AM058CD3AG datasheet(4/16 Pages) MICROCHIP

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The following table lists the dynamic characteristics (per SiC MOSFET) of the MSCSM170AM058CD3AG device.

Table 1-3. Dynamic Characteristics

Symbol Characteristic

Test Conditions

Min

Typ

Max

Unit

Ciss

Input capacitance

VGS = 0 V

VDS = 1000 V

f = 1 MHz

—

19.8

—

Coss

Output capacitance

—

0.9

—

Crss

Reverse transfer

capacitance

—

0.06

—

Total gate charge

VGS = –5 V/20 V

VBus = 850 V

ID = 180 A

—

1068

—

Qgs

Gate-source charge

—

294

—

Qgd

Gate-drain charge

—

162

—

Td(on)

Turn-on delay time

VGS = –5 V/20 V

VBus = 900 V

ID = 300 A

TJ = 150 °C

RGON = 4.7 Ω

RGOFF = 2.7 Ω

—

Rise time

—

Td(off)

Turn-off delay time

—

153

—

Fall time

—

Eon

Turn-on energy

VGS = –5 V/20 V

VBus = 900 V

ID = 300 A

RGON = 4.7 Ω

RGOFF = 2.7 Ω

TJ = 150 °C

—

13.5

—

Eoff

Turn-off energy

TJ = 150 °C

—

7.2

—

RGint

Internal gate resistance

—

0.98

—

RthJC

Junction-to-case thermal resistance

—

0.09

°C/W

The following table lists the body diode ratings and characteristics (per SiC MOSFET) of the

MSCSM170AM058CD3AG device.

Table 1-4. Body Diode Ratings and Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

VSD

Diode forward voltage

VGS = 0 V; ISD = 180 A

—

3.7

—

VGS = –5 V; ISD = 180 A

—

3.9

—

trr

Reverse recovery time

ISD = 180 A

VGS = –5 V

VR = 900 V

diF/dt = 6000 A/µs

—

Qrr

Reverse recovery charge

—

3.9

—

µC

Irr

Reverse recovery current

—

276

—

MSCSM170AM058CD3AG

Electrical Specifications

Datasheet

DS00003977A-page 4

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