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NTMTS001N06CL 데이터시트(PDF) 2 Page - ON Semiconductor

부품명 NTMTS001N06CL
상세설명  Power MOSFET 60 V, 0.81 m, 398.2 A, Single N?묬hannel
PDF  7 Pages
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제조업체  ONSEMI [ON Semiconductor]
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NTMTS001N06CL 데이터시트(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 mA, ref to 25°C
25
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
TJ = 25 °C
10
mA
TJ = 125°C
250
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = 20 V
100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.2
2.2
V
Threshold Temperature Coefficient
VGS(TH)/TJ
ID = 250 mA, ref to 25°C
−5.53
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
ID = 50 A
0.73
0.81
mW
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V
ID = 50 A
0.94
1.05
mW
Forward Transconductance
gFS
VDS =15 V, ID = 50 A
275
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
12300
pF
Output Capacitance
COSS
6225
Reverse Transfer Capacitance
CRSS
130
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 30 V; ID = 50 A
165
nC
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 30 V; ID = 50 A
74.3
nC
Threshold Gate Charge
QG(TH)
15.6
nC
Gate−to−Source Charge
QGS
28.7
Gate−to−Drain Charge
QGD
14.7
Plateau Voltage
VGP
2.59
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(ON)
VGS = 4.5 V, VDS = 30 V,
ID = 50 A, RG = 2.5 W
47.2
ns
Rise Time
tr
25.2
Turn−Off Delay Time
td(OFF)
70.7
Fall Time
tf
23.3
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.77
1.2
V
TJ = 125°C
0.63
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
98.9
ns
Charge Time
ta
66.8
Discharge Time
tb
32.1
Reverse Recovery Charge
QRR
229
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.



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