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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32H750VB 데이터시트(PDF) 175 Page - STMicroelectronics |
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STM32H750VB 데이터시트(HTML) 175 Page - STMicroelectronics |
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175 / 335 page  DS12556 Rev 5 175/334 STM32H750VB STM32H750ZB STM32H750IB STM32H750XB Electrical characteristics (rev Y) 311 en Voltage noise density at 1 KHz output loaded with 4 kΩ -140 - nV/√ Hz at 10 KHz -55 - IDDA(OPAMP) OPAMP consumption from VDDA Normal mode no Load, quiescent mode, follower - 570 1000 µA High- speed mode - 610 1200 1. Guaranteed by design, unless otherwise specified. 2. RLOAD is the resistive load connected to VSSA or to VDDA. 3. R2 is the internal resistance between the OPAMP output and th OPAMP inverting input. R1 is the internal resistance between the OPAMP inverting input and ground. PGA gain = 1 + R2/R1. Table 97. OPAMP characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit |
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