STM32H750VB datasheet(226/335 Pages) STMICROELECTRONICS

226 / 335 page

Electrical characteristics (rev V)

STM32H750VB STM32H750ZB STM32H750IB STM32H750XB

226/334

DS12556 Rev 5

Note:

For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 70. Typical application with a 32.768 kHz crystal

1. An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden to add one.

7.3.9

Internal clock source characteristics

The parameters given in Table 141 to Table 144 are derived from tests performed under

ambient temperature and VDD supply voltage conditions summarized in Table 120: General

operating conditions.

48 MHz high-speed internal RC oscillator (HSI48)

ai17531c

STM32

OSC32_OUT

fHSE

CL1

32.768 kHz

resonator

Bias

controlled

gain

OSC32_IN

CL2

Resonator with

integrated capacitors

Table 141. HSI48 oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI48

HSI48 frequency

VDD=3.3 V,

TJ=30 °C

47.5(1)

48.5(1) MHz

TRIM(2)

USER trimming step

0.175

USER TRIM

COVERAGE(3)

USER TRIMMING Coverage

± 32 steps

±4.79

±5.60

DuCy(HSI48)(2)

Duty Cycle

ACCHSI48_REL(3)(4)

Accuracy of the HSI48 oscillator over

temperature (factory calibrated)

TJ=-40 to 125 °C

–4.5

3.5

∆VDD(HSI48)(3)

HSI48 oscillator frequency drift with

VDD(5)

VDD=3 to 3.6 V

0.025

0.05

VDD=1.62 V to 3.6 V

0.05

0.1

tsu(HSI48)(2)

HSI48 oscillator start-up time

2.1

4.0

µs

IDD(HSI48)(2)

HSI48 oscillator power consumption

350

400

µA

NT jitter

Next transition jitter

Accumulated jitter on 28 cycles(6)

± 0.15

PT jitter

Paired transition jitter

Accumulated jitter on 56 cycles(6)

± 0.25

1. Guaranteed by test in production.

2. Guaranteed by design.

3. Guaranteed by characterization.

ΔfHSI = ACCHSI48_REL + ΔVDD.

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