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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM32H750VB 데이터시트(PDF) 228 Page - STMicroelectronics |
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STM32H750VB 데이터시트(HTML) 228 Page - STMicroelectronics |
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228 / 335 page  Electrical characteristics (rev V) STM32H750VB STM32H750ZB STM32H750IB STM32H750XB 228/334 DS12556 Rev 5 Low-speed internal (LSI) RC oscillator tsu(CSI) CSI oscillator startup time - - 1 2 µs tstab(CSI) CSI oscillator stabilization time (to reach ±3% of fCSI) - - - 4 cycle IDD(CSI) CSI oscillator power consumption - - 23 30 µA 1. Guaranteed by design. 2. Guaranteed by test in production. 3. Guaranteed by characterization. Table 143. CSI oscillator characteristics(1) (continued) Symbol Parameter Conditions Min Typ Max Unit Table 144. LSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fLSI LSI frequency VDD = 3.3 V, TJ = 25 °C 31.4(1) 1. Guaranteed by test in production. 32 32.6(1) kHz TJ = –40 to 110 °C, VDD = 1.62 to 3.6 V 29.76(2) 2. Guaranteed by characterization results. - 33.6(2) TJ = –40 to 125 °C, VDD = 1.62 to 3.6 V 29.4 - 33.6 tsu(LSI)(3) 3. Guaranteed by design. LSI oscillator startup time - - 80 130 µs tstab(LSI)(3) LSI oscillator stabilization time (5% of final value) - - 120 170 IDD(LSI)(3) LSI oscillator power consumption - - 130 280 nA |
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