MIC5021 datasheet(4/24 Pages) MICROCHIP

부품명	MIC5021

상세설명	High-Speed, High-Side MOSFET Driver with Charge Pump and Overcurrent Limit

PDF	24 Pages

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제조업체	MICROCHIP [Microchip Technology]

홈페이지	http://www.microchip.com

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4 / 24 page

MIC5021

DS20005677B-page 4



2016 - 2021 Microchip Technology Inc. and its subsidiaries.

Gate Fall Time

—

400

500

Note 6

Max. Operating Frequency

fMAX

100

150

—

kHz

Note 7

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, GND = 0V, VDD = 12V, CT = OPEN,

Gate CL = 1500 pF (IRF540 MOSFET).

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Note 1: When using sense MOSFETs, it is recommended that RSENSE < 50Ω. Higher values may affect the sense

MOSFET’s current transfer ratio.

2: DC measurement.

3: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 0V to 2V.

4: Input switched from 0.8V (TTL low) to 2.0V (TTL high), time for gate transition from 2V to 17V.

5: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 20V (gate on voltage)

to 17V.

6: Input switched from 2.0V (TTL high) to 0.8V (TTL low), time for gate transition from 17V to 2V.

7: Frequency where gate on voltage reduces to 17V with 50% input duty cycle.

8: Gate on time tG(ON) and tG(OFF) are not 100% production tested.

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