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AOU417L 데이터시트(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOU417L 데이터시트(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 5 page ![]() Symbol VDS VGS IDM IAR EAR TJ, TSTG Symbol Typ Max RθJA 105 125 RθJL 2.5 3 V V ±20 25 A -18 16.2 50 A Gate-Source Voltage Drain-Source Voltage -30 Pulsed Drain Current -18 -18 -40 Avalanche Current C Continuous Drain Current B,G Maximum Units Parameter TA=25°C G TA=100°C G Absolute Maximum Ratings TA=25°C unless otherwise noted ID Junction and Storage Temperature Range -55 to 175 Repetitive avalanche energy L=0.1mH C mJ Power Dissipation B TC=25°C PD W TC=100°C °C Maximum Junction-to-Case C Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A Steady-State °C/W AOU417 P-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = -30V ID = -18A (VGS = -10V) RDS(ON) < 22mΩ (VGS = -10V) RDS(ON) < 40mΩ (VGS = -4.5V) General Description The AOU417 uses advanced trench technology to provide excellent RDS(ON), and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard product AOU417 is Pb- free (meets ROHS & Sony 259 specifications). AOU417L is a Green Product ordering option. AOU417 and AOU417L are electrically identical . G D S Top View Drain Connected to Tab TO-251 G D S Alpha & Omega Semiconductor, Ltd. |
유사한 부품 번호 - AOU417L |
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유사한 설명 - AOU417L |
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