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3CD010G 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 3CD010G
상세설명  isc Silicon PNP Power Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
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isc website：www.iscsemi.cn
isc&iscsemi is registered trademark
isc Silicon PNP Power Transistor
3CD010G
DESCRIPTION
·
DC Current Gain
: hFE= 15@IC = -0.75A
·
Collector-Emitter Sustaining Voltage
: VCEO(SUS)= -200V(Min)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in general purpose power amplifier and
switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-1.5
A
PC
Collector Power Dissipation
@ TC=25℃
10
W
Tj
Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.5
℃
/W


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