FX3ASJ-3 datasheet(1/2 Pages) ISC

부품명	FX3ASJ-3

상세설명	isc P-Channel MOSFET Transistor

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제조업체	ISC [Inchange Semiconductor Company Limited]

홈페이지	http://www.iscsemi.cn

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isc P-Channel MOSFET Transistor

FX3ASJ-3

FEATURES

·

Drain Current : ID= -3A@ TC=25℃

·

Drain Source Voltage

: VDSS= -150V(Min)

·

Static Drain-Source On-Resistance

: RDS(on) =1.2Ω(Max) @VGS=-10V

·

100% avalanche tested

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

DESCRIPTION

·

motor drive, DC-DC converter, power switch

and solenoid drive.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

-150

V

VGS

Gate-Source Voltage-Continuous

±

20

V

ID

Drain Current-Continuous

-3

A

IDM

Drain Current-Single Pluse

-12

A

PD

Total Dissipation @TC=25℃

30

W

TJ

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

4.17

℃

/W

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FX3ASJ-3 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

FX3ASJ-3 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited

유사한 부품 번호 - FX3ASJ-3

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