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PR812BA33 데이터시트(PDF) 3 Page - NIKO SEMICONDUCTOR CO., LTD. |
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PR812BA33 데이터시트(HTML) 3 Page - NIKO SEMICONDUCTOR CO., LTD. |
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3 / 6 page ![]() REV 1.0 3 K-12-1 N-Channel Enhancement Mode Field Effect Transistor PR812BA33 PowerFET NIKO-SEM SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current 3 IS 41 A Forward Voltage 1 VSD IF = 14A, VGS = 0V 1.2 V Reverse Recovery Time trr IF = 14A, dlF/dt = 100A / S 60 nS Reverse Recovery Charge Qrr 66 nC 1Pulse test : Pulse Width 300 sec, Duty Cycle 2%. 2Independent of operating temperature. 3The maximum current rating is package limited. |
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