| 전자부품 데이터시트 검색엔진 |
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DN6849S 데이터시트(PDF) 2 Page - Panasonic Semiconductor |
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DN6849S 데이터시트(HTML) 2 Page - Panasonic Semiconductor |
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2 / 3 page ![]() VCC ICC IO PD Topr Tstg Supply voltage Supply current Circuit current Power dissipation Opearting ambient temperature Storage temperature V mA mA mW ˚C ˚C Parameter Symbol Rating Unit s Absolute Maximum Ratings (Ta=25˚C) 18 8 20 150 –40 to+100 –55 to+125 Parameter Symbol Condition min typ max Unit s Electrical Characteristics (Ta=25˚C) Operating flux density –17.5 B1 (L to H) mT –6 VCC=12V B2 (H to L) 17.5 mT 6 VCC=12V Hysteresis width 7 BW mT 10 VCC=12V Low output voltage VOL 0.4 V Supply current mA VCC=16V ICC 5.5 mA VCC=4.5V 6 High output current IOH 10 µA VCC=4.5 to 16V, IO=12mA, B=17.5mT VCC=4.5 to 16V, VO=16V, B=–17.5mT 1.5 1.0 1.75 Unit : mm The center of the Hall element is in the hatched area in the right figure. · DN6849 1.0 1.63 · DN6849SE 1.0 1.5 · DN6849TE · DN6849S Distance from package surface to sensor DN6849 0.7 DN6849SE 0.42 DN6849TE 0.4 DN6849S 0.65 s Hall Element Position Marking surface Applied flux direction Flux density (B) B1 B2 s Flux-Voltage Conversion Characteristics |
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