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BAS40WD 데이터시트(PDF) 3 Page - FutureWafer Tech Co.,Ltd |
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BAS40WD 데이터시트(HTML) 3 Page - FutureWafer Tech Co.,Ltd |
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3 / 11 page ![]() BAS40WD Series Surface Mount Switching Diode 3 Document No.: F21837W 30-DEC-2021 V 2.0 www.futurewafer.com.tw FQE-001-04 Parameter Symbol Condition Min. Typ. Units Max. Reverse Breakdown Voltage V BR I R = 10uA 40 - V - Forward Voltage V F I F = 1mA - - 0.38 I F = 200mA - - 1.0 Reverse Recovery Time t rr I F = I T = 10mA, I rr = 1mA, R L = 100Ω - - nS 5.0 Reverse Leakage Current I R V R = 30V, T J = 25°C - 20 nA 100 Junction Capacitance C I/O Pin Capacitance to GND. V dc = 0V, f = 1MHZ - 4.0 pF 5.0 3-1. Electrical Characteristics 3. Electrical Property 3-2. Ratings and Characteristics Curve (TA=25°C unless otherwise noted) Fig 1. Typical Forward Characteristics Forward Voltage, V F (V) Fig 3. Typical Junction Capacitance Fig 4. Power Derating Curve Case Temperature, T C (°C) Reverse Voltage, V R (V) Fig 2. Reverse Current Reverse Voltage, V R (V) T A = 25°C T A = 75°C T A = 125°C |
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