| 전자부품 데이터시트 검색엔진 |
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2SC4083P 데이터시트(PDF) 2 Page - AiT Semiconductor Inc. |
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2SC4083P 데이터시트(HTML) 2 Page - AiT Semiconductor Inc. |
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2 / 4 page ![]() AiT Semiconductor Inc. www.ait-ic.com 2SC4083P GENERAL PURPOSE TRANSISTOR HIGH-FREQUENCY AMPLIFIER TRANSISTOR 11V, 50mA, 3.2GHz REV1.0 - APR 2021 RELEASED - - 2 - ABSOLUTE MAXIMUM RATINGS TA=25℃ Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS TA = 25°C VCBO, Collector-base voltage 20V VCEO, Collector-emitter voltage 11V VEBO, Emitter-base voltage 3V IC, Collector Current 50mA PC, Collector Power Dissipation 0.15W TJ, Junction Temperature 150℃ TSTG, Storage Temperature -55℃~+150℃ Parameter Symbol Characteristic Min Typ. Max Unit Collector-Base Breakdown Voltage BVCBO IC=1.0μA 20 - - V Collector-Emitter Breakdown Voltage BVCEO IC = 1mA 11 - - V Emitter-Base Breakdown Voltage BVEBO IE = 10μA 3 - - V Collector Cutoff Current ICBO VCB = 10V - - 0.5 µA Emitter Cutoff Current IEBO VEB = 2V - - 0.5 µA Collector-Emitter Saturation Voltage VCE(sat) IC/IB = 10mA/5mA - - 0.5 V DC Current Transfer Ratio hFE VCE/IC = 10V/5mA 82 - 180 Transition Frequency fT VCB = 10V, IC = 10mA, f = 500MHz 1.4 3.2 - GHz Output Capacitance Cob VCB = 10V, IE = 0A, f = 1MHz - 0.8 1.5 pF Collector-Base Time constant rbb'·Cc VCB = 10V, IC = 10mA, f = 31.8MHz - 4 12 ps Noise Factor NF VCE = 6V, IC = 2mA, f = 500MHz, Rg = 50Ω - 3.5 - dB |
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