2SC4672R datasheet(2/5 Pages) AITSEMI

2 / 5 page

AiT Semiconductor Inc.

www.ait-ic.com

2SC4672

GENERAL PURPOSE TRANSISTOR

1W 1.5A 25V NPN SILICON

REV1.0

- JUN 2014 RELEASED -

- 2 -

ABSOLUTE MAXIMUM RATINGS

VCEO, Collector-Emitter Voltage(IB=0)

25V

VCBO, Collector-Base Voltage(IE=0)

40V

VEBO, Emitter-Base Voltage(IC=0)

IC, Collector Current

1.5A

PTOT, Total Device Dissipation(TA =25°C)NOTE1

TJM, Junction Temperature(Max)

150°C

TSTG, Storage Temperature

-55°C ~150°C

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

NOTE1: Device is mounted on a printed circuit board.

ELECTRICAL CHARACTERISTICS

TA=25°C, unless otherwise specified

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC= 2mA, IB=0

Collector-Base Breakdown Voltage

V(BR)CBO

IC=100μA, IE=0

Emitter-Base Breakdown Voltage

V(BR)EBO

IE=100μA,IC=0

Forward Current Transfer Ratio

hFE

VCE=1V,

IC=100mA

120

270

180

390

Collector-Base Current

ICBO

VCB=35V, IE=0

100

Collector-Emitter Saturation Voltage

VCE(sat)

IC=800mA, IB=80mA

0.5

Characteristic Frequency

IC=50mA, VCE=10V,

f=100MHz

100

MHz

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