| 전자부품 데이터시트 검색엔진 |
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TN2106 데이터시트(PDF) 5 Page - Microchip Technology |
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TN2106 데이터시트(HTML) 5 Page - Microchip Technology |
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5 / 14 page ![]() 2020 Microchip Technology Inc. DS20005942A-page 5 TN2106 FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to-Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(th) and RDS Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. T j ( OC) -50 0 50 100 150 1.1 1.0 0.9 0 2.0 4.0 6.0 8.0 10 1.0 0.8 0.6 0.4 0.2 0 T A = -55 OC V DS = 25V 125OC V GS (volts) 25OC 100 75 50 25 0 V DS (volts) 0 10 20 30 40 f = 1.0MHz C ISS C OSS C RSS I D (amperes) 10 8.0 6.0 4.0 2.0 0 V GS = 4.5V 0 0.5 1.0 1.5 2.0 2.5 V GS = 10V 1.2 1.0 0.8 0.6 0.4 2.0 1.6 1.2 0.8 0.4 0 V GS(th) @ 1.0mA R DS(ON) @ 10V, 0.5A T j ( OC) -50 0 50 100 150 Q G (nanocoulombs) 10 8.0 6.0 4.0 2.0 0 0 0.2 0.4 0.6 0.8 1.0 38 pF V DS = 10V 92 pF V DS = 20V |
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