QPA2225DEVBA datasheet(18/23 Pages) QORVO

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QPA2225D

28 – 38 GHz 0.4 Watt GaN Driver Amplifier

Data Sheet Rev. B, May 2021 | Subject to change without notice

18 of 23

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Thermal and Reliability Information

Parameter

Test Conditions

Value

Units

Thermal Resistance (θJC) (1)

Tbase = 85 ºC, VD = 20 V, IDQ = 64 mA, PDISS = 1.28

W, No RF (quiescent DC operation)

26.9

ºC/W

Channel Temperature, TCH (No RF) (2)

106

°C

Thermal Resistance (θJC) (1)

Tbase = 85 ºC, VD = 20 V, IDQ = 64 mA, Freq = 32

GHz, ID_Drive = 165 mA, PIN = 13 dBm, POUT = 25.8

dBm, PDISS = 2.95 W

PDISS = 9.36 W

17.3

ºC/W

Channel Temperature, TCH (Under RF) (2)

136

°C

Thermal Resistance (θJC) (1)

Tbase = 85 ºC, VD = 28 V, IDQ = 64 mA, Freq = 32

GHz, ID_Drive = 158 mA, PIN = 13 dBm, POUT = 25.5

dBm, PDISS = 4.1 W

PDISS = 12.25 W

18.1

ºC/W

Channel Temperature, TCH (Under RF) (2)

159

ºC

Notes:

Thermal resistance determined to the back of a 20 mil Cu-Mo carrier plate with eutectic die attach (85 ºC)

Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates

Dissipated Power and Maximum Gate Current

Test conditions, unless otherwise noted: CW, VD = 20 V, IDQ = 64 mA, PIN = +13dBm, TBASE = +8

5 ºC

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

Frequency (GHz)

Dissipated Power vs. Freq. vs. VD

20 V

22 V

24 V

26 V

28 V

TBASE = 85 ºC

110

120

130

140

150

160

170

180

Channel Temperature (°C)

IG_MAX vs. TCH

Total Ig

Each Stage Ig

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