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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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STM8L151X6 데이터시트(PDF) 94 Page - STMicroelectronics |
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STM8L151X6 데이터시트(HTML) 94 Page - STMicroelectronics |
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94 / 147 page  Electrical parameters STM8L151x6/8 STM8L152x6/8 94/147 DS6948 Rev 11 Figure 24. Typical HSI frequency vs. VDD Low speed internal RC oscillator (LSI) In the following table, data are based on characterization results. 4. Guaranteed by design. Table 34. LSI oscillator characteristics Symbol Parameter Conditions(1) 1. VDD = 1.65 V to 3.6 V, TA = -40 to 125 °C unless otherwise specified. Min. Typ. Max. Unit fLSI Frequency 26 38 56 kHz tsu(LSI) LSI oscillator wakeup time 200(2) 2. Guaranteed by design. µs D(LSI) LSI oscillator frequency drift(3) 3. This is a deviation for an individual part, once the initial frequency has been measured. 0 °C ≤TA ≤ 85 °C -12 11 % 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 -40°C 25°C 85°C VDD [V] 1.8 1.95 2.1 2.25 2.4 2.55 2.7 2.85 3 3.15 3.3 3.45 3.6 ai18218c |
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