IRF830ASTRLPBFA datasheet(1/10 Pages) VISHAY

부품명	IRF830ASTRLPBFA

상세설명	Power MOSFET

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제조업체	VISHAY [Vishay Siliconix]

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IRF830AS, IRF830AL, SiHF830AS, SiHF830AL

www.vishay.com

Vishay Siliconix

S21-0901-Rev. D, 30-Aug-2021

1

Document Number: 91062

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Power MOSFET

FEATURES

• Low gate charge Qg results in simple drive

requirement

• Improved gate, avalanche and dynamic dV/dt

ruggedness

• Fully characterized capacitance and avalanche

voltage and current

• Effective Coss specified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

APPLICATIONS

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

TYPICAL SMPS TOPOLOGIES

• Two transistor forward

• Half bridge and full bridge

Note

a. See device orientation

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. Starting TJ = 25 °C, L = 18 mH, Rg = 25

Ω, IAS = 5.0 A (see fig. 12)

c. ISD

≤ 5.0 A, dI/dt ≤ 370 A/μs, VDD ≤ VDS, TJ ≤ 150 °C

d. 1.6 mm from case

e. Uses SiHF830A data and test conditions

PRODUCT SUMMARY

VDS (V)

500

RDS(on) max. (

Ω)VGS = 10 V

1.40

Qg max. (nC)

24

Qgs (nC)

6.3

Qgd (nC)

11

Configuration

Single

N-Channel MOSFET

G

D

S

D2PAK (TO-2

G

D

S

I2PAK (TO-262)

G

D

S

Available

ORDERING INFORMATION

Package

D2PAK (TO-263)

I2PAK (TO-262)

Lead (Pb)-free and Halogen-free

SiHF830AS-GE3

SiHF830ASTRL-GE3 a

SiHF830AL-GE3 a

Lead (Pb)-free

IRF830ASPbF

IRF830ASTRLPbF a

IRF830ALPbF

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

500

V

Gate-Source Voltage

VGS

± 30

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

5.0

A

TC = 100 °C

3.2

Pulsed Drain Current a, e

IDM

20

Linear Derating Factor

0.59

W/°C

Single Pulse Avalanche Energy b, e

EAS

230

mJ

Avalanche Currenta

IAR

5.0

A

Repetiitive Avalanche Energy a

EAR

7.4

mJ

Maximum Power Dissipation

TA = 25 °C

PD

3.1

W

TC = 25 °C

74

Peak Diode Recovery dV/dtc, e

dV/dt

5.3

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to +150

°C

Soldering Recommendations (Peak temperature) d

for 10 s

300

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