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SPC58EE80C3 데이터시트(PDF) 72 Page - STMicroelectronics

부품명 SPC58EE80C3
상세설명  32-bit Power Architecture microcontroller for automotive ASIL-D applications
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Electrical characteristics
SPC58EEx, SPC58NEx
72/154
DS11646 Rev 4
Table 34. MSC/DSPI LVDS transmitter electrical characteristics (1),(2),(3)
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
fDATA
SR D
Data rate
—
—
—
80
Mbps
VOS
CC P
Common mode voltage
—
1.08
—
1.32
V
|
ΔVOD|CC P
Differential output voltage swing
(terminated)(4),(5)
—
150
—
400
mV
tTR
CC T
Rise time from -|
ΔVOD(min)| to
+|
ΔVOD(min)|. Fall time from
+|
ΔVOD(min)| to -|ΔVOD(min)|(6)
—
0.8
—
5.8
ns
CL
SR D
External lumped differential load
capacitance(4)
VDD_HV_IO = 4.5 V
—
—
50
pF
VDD_HV_IO = 3.0 V
—
—
39
ILVDS_TX CC C
Transmitter DC current consumption
Enabled
—
—
5.0
mA
IPIN_TX
CC D
Transmitter DC current sourced through
output pin
—
1.5
—
4.0
mA
1. This table is applicable to MSC/DSPI LVDS pads used in MSC configuration (SIUL2_MSCR_IO_n.ODC=100).
2. The MSC and DSPI LVDS pad electrical characteristics are based on the application circuit and typical worst case internal
capacitance values given in Figure 12.
3. All MSC and DSPI LVDS pad electrical characteristics are valid from -40 °C to 165 °C.
4. Valid for maximum data rate fDATA. Value given is the capacitance on each terminal of the differential pair, as shown in
Figure 12.
5. Valid for maximum external load CL.
6. The transition time is measured from 10% to 90% of the voltage transition from -|
ΔVOD|(min) to +|ΔVOD|(min).
Table 35. MSC LVDS transmitter electrical characteristics for LFAST pads. (1),(2),(3)
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
fDATA
SR D
Data rate
—
—
—
320
Mbps
VOS
CC P
Common mode voltage
—
1.08
—
1.32
V
|
ΔVOD|CC P
Differential output voltage swing
(terminated)(4),(5)
—
120
—
400
mV
tTR
CC T
Rise time from -|
ΔVOD(min)| to
+|
ΔVOD(min)|. Fall time from
+|
ΔVOD(min)| to -|ΔVOD(min)|(6)
—0.26
—
1.4
ns
CL
SR D
External lumped differential load
capacitance(4)
VDD_HV_IO = 4.5 V
—
—
12.0
pF
VDD_HV_IO = 3.0 V
—
—
8.5
ILVDS_TX CC C
Transmitter DC current consumption
Enabled
—
—
5.0
mA
IPIN_TX
CC D
Transmitter DC current sourced through
output pin
—1.5
4.0
mA
1. This table is applicable to LFAST LVDS pads used in MSC configuration (SIUL2_MSCR_IO_n.ODC=100).
2. The MSC and DSPI LVDS pad electrical characteristics are based on the application circuit and typical worst case internal
capacitance values given in Figure 12.



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