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ST25TV02K 데이터시트(PDF) 72 Page - STMicroelectronics |
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ST25TV02K 데이터시트(HTML) 72 Page - STMicroelectronics |
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72 / 90 page ![]() 8 Device parameters 8.1 Maximum ratings Stressing the device above the ratings listed in Table 152. Absolute maximum ratings may permanently damage it. These are stress ratings only and operation of the device, at these or any other conditions above those indicated in the operating sections of this specification, is not implied. Exposure to absolute maximum rating conditions for extended periods may affect the device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents. Table 152. Absolute maximum ratings Symbol Parameter Min. Max. Unit TA Ambient operating temperature - 40 85 °C TSTG Storage temperature UFDFPN5 -65 150 °C Sawn wafer on UV tape kept in its original packing form 15 25 °C tSTG Retain - 9 (1) months VMAX_1 (2) RF input voltage amplitude peak to peak between AC0 and AC1, VSS pin left floating VAC0 - VAC1 - 11 V VESD Electrostatic discharge voltage (3)(human body model) All pins - 1500 V 1. Counted from ST production date. 2. Based on characterization, not tested in production. 3. ANSI/ESDA/JEDEC JS-001-2012, C = 100 pF, R = 1500 Ω, R2 = 500 Ω 8.2 RF electrical parameters This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device in RF mode. The parameters in the DC and AC characteristics tables that follow are derived from tests performed under the Measurement Conditions summarized in the relevant tables. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters. Table 153. RF characteristics Symbol Parameter Condition(1)(2) Min Typ Max Unit fCC External RF signal frequency 13.553 13.56 13.567 MHz MICARRIER 10% carrier modulation index (3) 10 - 30 % 100% carrier modulation index - 95 - 100 tBoot_RF RF Boot time (Minimum time from carrier generation to first data) From H-field min - - 1 ms fSH Subcarrier frequency high FCC/32 - 423.75 - kHz fSL Subcarrier frequency low FCC/28 - 484.28 - kHz t1 VICC response delay - 318.6 320.9 323.3 µs t2 VCD new request delay - 309 311.5 314 µs t3 VCD new request delay when no response is received from the VICC - 323.3 - - µs Wt Time for Write operation (including internal Verify) (4) 1 Block - 5.2 - ms ST25TV02K ST25TV512 Device parameters DS12074 - Rev 11 page 72/90 |
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