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STM32F107VB 데이터시트(PDF) 38 Page - STMicroelectronics |
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STM32F107VB 데이터시트(HTML) 38 Page - STMicroelectronics |
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38 / 108 page ![]() Electrical characteristics STM32F105xx, STM32F107xx 38/108 DocID15274 Rev 10 5.3.2 Operating conditions at power-up / power-down Subject to general operating conditions for TA. 5.3.3 Embedded reset and power control block characteristics The parameters given in Table 11 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 9. Table 10. Operating condition at power-up / power down Symbol Parameter Condition Min Max Unit tVDD VDD rise time rate - 0- µs/V TJ VDD fall time rate 20 - Table 11. Embedded reset and power control block characteristics Symbol Parameter Conditions Min Typ Max Unit VPVD Programmable voltage detector level selection PLS[2:0]=000 (rising edge) 2.1 2.18 2.26 V PLS[2:0]=000 (falling edge) 2 2.08 2.16 V PLS[2:0]=001 (rising edge) 2.19 2.28 2.37 V PLS[2:0]=001 (falling edge) 2.09 2.18 2.27 V PLS[2:0]=010 (rising edge) 2.28 2.38 2.48 V PLS[2:0]=010 (falling edge) 2.18 2.28 2.38 V PLS[2:0]=011 (rising edge) 2.38 2.48 2.58 V PLS[2:0]=011 (falling edge) 2.28 2.38 2.48 V PLS[2:0]=100 (rising edge) 2.47 2.58 2.69 V PLS[2:0]=100 (falling edge) 2.37 2.48 2.59 V PLS[2:0]=101 (rising edge) 2.57 2.68 2.79 V PLS[2:0]=101 (falling edge) 2.47 2.58 2.69 V PLS[2:0]=110 (rising edge) 2.66 2.78 2.9 V PLS[2:0]=110 (falling edge) 2.56 2.68 2.8 V PLS[2:0]=111 (rising edge) 2.76 2.88 3 V PLS[2:0]=111 (falling edge) 2.66 2.78 2.9 V VPVDhyst(2) PVD hysteresis - - 100 - mV VPOR/PDR Power on/power down reset threshold Falling edge 1.8(1) 1. The product behavior is guaranteed by design down to the minimum VPOR/PDR value. 1.88 1.96 V Rising edge 1.84 1.92 2.0 V VPDRhyst(2) PDR hysteresis - - 40 - mV TRSTTEMPO(2) 2. Guaranteed by design, not tested in production. Reset temporization - 1 2.5 4.5 ms |
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